Onsemi (NTD5865NLT4G) Power MOSFET, N Channel, 60 V, 46 A, 0.016 ohm

Power MOSFET, N Channel, 60 V, 46 A, 0.016 ohm, TO-252 (DPAK), Surface Mount Product Overview The NTD5865NLT4G is a N-channel Power MOSFET features low gate charge, high current capability and fast switching. 100% Avalanche tested ±20V Gate-source voltage 2.1°C/W Junction-to-case (drain) thermal resistance 49°C/W Junction-to-ambient thermal resistance Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 46A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.016ohm On Resistance Rds(on): 0.016ohm Transistor Case Style: TO-252 (DPAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 1V Power Dissipation Pd: 52W Power Dissipation: 52W No. of Pins: 3Pins Operating Temperature Max: 150°C