Diodes Inc. (FZT658) Bipolar (BJT) Single Transistor, NPN, 400 V

Product Overview The FZT658 is a NPN silicon planar high voltage Bipolar Transistor offers 500mA high continuous current and less-than 250mV low saturation voltage VCE (SAT) @ 50mA. UL94V-0 Flammability rating 1A Peak pulse current hFE>40 Specified up to 200mA for high current gain hold-up PNP complement is FZT758 Halogen-free, Green device -55 to 150°C Operating temperature range Applications Aerospace, Defence, Military, Automotive, Industrial, Power Management Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 400V DC Collector Current: 500mA Power Dissipation Pd: 2W Transistor Case Style: SOT-223 Transistor Mounting: Surface Mount No. of Pins: 4Pins Transition Frequency ft: 50MHz DC Current Gain hFE: 50hFE Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited