Infineon (IRFP260MPBF) Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm

Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole Product Overview The IRFP260MPBF is a HEXFET® fifth generation N-channel Power MOSFET utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. Advanced process technology Dynamic dV/dt rating Fully avalanche rating Ease of paralleling Simple drive requirements Low static drain-to-source ON-resistance Applications Commercial, Industrial, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 50A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.04ohm On Resistance Rds(on): 0.04ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 300W Transistor Case Style: TO-247AC Power Dissipation: 300W No. of Pins: 3Pins Operating Temperature Max: 175°C