Vishay (SIHG14N50D-GE3) Power MOSFET, N Channel, 500 V, 14 A, 0.32 ohm

Power MOSFET, N Channel, 500 V, 14 A, 0.32 ohm, TO-247AC, Through Hole Product Overview The SIHG14N50D-GE3 is a D series N-channel enhancement-mode Power MOSFET suitable for consumer electronics, telecom power supply and battery charger applications. Low area specific ON-resistance Low input capacitance (CISS) Reduced capacitive switching losses High body diode ruggedness Avalanche energy rated (UIS) Simple gate drive circuitry Low figure-of-merit (FOM) Ron x Qg Fast switching Halogen-free Applications Industrial, Power Management, Portable Devices, Consumer Electronics Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 14A Drain Source Voltage Vds: 500V Drain Source On State Resistance: 0.32ohm On Resistance Rds(on): 0.32ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 208W Transistor Case Style: TO-247AC Power Dissipation: 208W No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: D MSL: MSL 1 - Unlimited