Infineon (IRF1407PBF) Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm

Power MOSFET, N Channel, 75 V, 130 A, 0.0078 ohm, TO-220AB, Through Hole Product Overview The IRF1407PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this HEXFET® power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. Advanced process technology Dynamic dV/dt rating Repetitive avalanche allowed up to Tjmax Applications Motor Drive & Control, Automotive, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 130A Drain Source Voltage Vds: 75V Drain Source On State Resistance: 0.0078ohm On Resistance Rds(on): 0.0078ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 330W Transistor Case Style: TO-220AB Power Dissipation: 330W No. of Pins: 3Pins Operating Temperature Max: 175°C