Onsemi (FDD13AN06A0) Power MOSFET, N Channel, 60 V, 50 A, 0.0115 ohm

Power MOSFET, N Channel, 60 V, 50 A, 0.0115 ohm, TO-252AA, Surface Mount Product Overview The FDD13AN06A0 is a N-channel MOSFET produced using PowerTrench® process. It is suitable for use in synchronous rectification and battery protection circuit application. Low miller charge Low Qrr body diode UIS Capability (single pulse and repetitive pulse) Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 50A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.0115ohm On Resistance Rds(on): 0.0115ohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 115W Transistor Case Style: TO-252AA Power Dissipation: 115W No. of Pins: 3Pins Operating Temperature Max: 175°C MSL: MSL 1 - Unlimited