Infineon (IRF3205PBF) Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm

Power MOSFET, N Channel, 55 V, 110 A, 0.008 ohm, TO-220AB, Through Hole Product Overview The IRF3205PBF is a HEXFET® N-channel Power MOSFET with extremely low on-resistance per silicon area and fast switching performance. Advanced HEXFET® power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Dynamic dv/dt rating Fully avalanche rated Fast switching ±20V gate-source voltage Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 110A Drain Source Voltage Vds: 55V Drain Source On State Resistance: 0.008ohm On Resistance Rds(on): 0.008ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Transistor Case Style: TO-220AB Power Dissipation Pd: 200W Power Dissipation: 200W No. of Pins: 3Pins Operating Temperature Max: 175°C