Stmicroelectronics (IRF630) Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm

Power MOSFET, N Channel, 200 V, 9 A, 0.4 ohm, TO-220, Through Hole Product Overview The IRF630 from STMicroelectronics is a through hole, 200V N channel mesh overlay II power MOSFET in TO-220 package. This power MOSFET is designed using the company's consolidated strip layout based MESH OVERLAY process which matches and improves the performances. Features extremely high dv/dt capability, very low intrinsic capacitances and gate charge minimized. Drain to source voltage (Vds) is 200V Gate to source voltage of ±20V Continuous drain current (Id) is 9A Power dissipation (Pd) is 75W Operating junction temperature range from -65°C to 150°C Gate threshold voltage of 3V Low on state resistance of 350mohm at Vgs 10V Applications Power Management, Consumer Electronics, Portable Devices, Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 9A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.4ohm On Resistance Rds(on): 0.4ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 100W Transistor Case Style: TO-220 Power Dissipation: 100W No. of Pins: 3Pins Operating Temperature Max: 150°C