Onsemi (TIP3055G) Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A
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  • Onsemi (TIP3055G) Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A

Onsemi (TIP3055G) Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A

R306.41
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Onsemi (TIP3055G) Bipolar (BJT) Single Transistor, NPN, 60 V, 15 A

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Product Overview The TIP3055G is a 60V Silicon NPN Bipolar Complementary Power Transistor designed for general purpose switching and amplifier applications. Excellent safe operating area DC Current gain(hFE = 20 to 70 at Ic = 4ADC) Collector-emitter saturation voltage(Vce (sat) = 1.1VDC maximum at Ic = 4ADC) Applications Industrial, Power Management Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 60V Transition Frequency ft: 2.5MHz Power Dissipation Pd: 90W DC Collector Current: 15A DC Current Gain hFE: 5hFE Transistor Mounting: Through Hole Transistor Case Style: TO-247 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: TIPxxx Automotive Qualification Standard: - MSL: -

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