Infineon (IRFP064NPBF) Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm

Power MOSFET, N Channel, 55 V, 98 A, 0.008 ohm, TO-247AC, Through Hole Product Overview The IRFP064NPBF is utilizes advanced processing techniques to achieve extremely low on-resistant per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. Dynamic dv/dt rating Fully avalanche rated Advanced process technology Ultra low on-resistance Fast switching Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 55V Continuous Drain Current Id: 98A Drain Source On State Resistance: 0.008ohm On Resistance Rds(on): 0.008ohm Transistor Case Style: TO-247AC Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 150W Power Dissipation: 150W No. of Pins: 3Pins Operating Temperature Max: 175°C