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Vishay (SI4963BDY-T1-E3) Dual MOSFET, P Channel, 20 V, 4.9 A, 0.025 ohm
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  • Vishay (SI4963BDY-T1-E3) Dual MOSFET, P Channel, 20 V, 4.9 A, 0.025 ohm

Vishay (SI4963BDY-T1-E3) Dual MOSFET, P Channel, 20 V, 4.9 A, 0.025 ohm

R210.07
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Vishay (SI4963BDY-T1-E3) Dual MOSFET, P Channel, 20 V, 4.9 A, 0.025 ohm

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Dual MOSFET, P Channel, 20 V, 4.9 A, 0.025 ohm, SOIC, Surface Mount Product Information Transistor Polarity: P Channel Continuous Drain Current Id: 4.9A Drain Source Voltage Vds: 20V On Resistance Rds(on): 0.025ohm Rds(on) Test Voltage: 2.5V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 1.4V Power Dissipation Pd: 1.1W Transistor Case Style: SOIC No. of Pins: 8Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited

Vishay
2335325
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