Vishay (SIHF30N60E-GE3) Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm

Power MOSFET, N Channel, 600 V, 29 A, 0.104 ohm, TO-220FP, Through Hole Product Overview The SIHF30N60E-GE3 is a 650V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, server, telecom and PFC power supplies, solar, motor drives, induction heating, renewable energy and welding applications. Low figure-of-merit(FOM) RON x Qg Low input capacitance (CISS) Reduced switching and conduction losses Ultra low gate charge Avalanche energy rated Halogen-free Applications Industrial, Power Management, Communications & Networking, Lighting, Portable Devices, Computers & Computer Peripherals, Alternative Energy, Motor Drive & Control, LED Lighting Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 29A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 0.104ohm On Resistance Rds(on): 0.104ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2V Power Dissipation Pd: 37W Transistor Case Style: TO-220FP Power Dissipation: 37W No. of Pins: 3Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited