Onsemi (MJE13007G) Bipolar (BJT) Single Transistor, NPN, 400 V, 8 A

Product Overview The MJE13007G is a Silicon NPN Bipolar Power Transistor designed for high voltage and high speed power switching inductive circuits where fall time is critical. It is particularly suited for 115 and 220V switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. SOA and switching applications Collector-base voltage (Vcbo = 700V) Emitter-base voltage (Vcbo = 9V) Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 400V Transition Frequency ft: 14MHz Power Dissipation Pd: 80W DC Collector Current: 8A DC Current Gain hFE: 4hFE Transistor Mounting: Through Hole Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -