Onsemi (FDD86102LZ) Power MOSFET, N Channel, 100 V, 42 A, 0.0178 ohm

Power MOSFET, N Channel, 100 V, 42 A, 0.0178 ohm, TO-252 (DPAK), Surface Mount Product Overview The FDD86102LZ is a N-channel MOSFET produced using advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and switching loss. The G-S Zener has been added to enhance ESD voltage level. Very low Qg and Qgd compared to competing Trench technologies Fast switching speed 100% UIL tested 6kV typical HBM ESD protection level Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 42A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.0178ohm On Resistance Rds(on): 0.0178ohm Transistor Case Style: TO-252 (DPAK) Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 1.5V Power Dissipation Pd: 54W Power Dissipation: 54W No. of Pins: 3Pins Operating Temperature Max: 150°C MSL: MSL 1 - Unlimited