Infineon (IRFB7430PBF) Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole Product Overview Single N-channel StrongIRFET™ power MOSFET ideal for low frequency applications requiring performance and ruggedness. It is suitable for use in brushed motor drive applications, BLDC motor drive applications, battery powered circuits, half-bridge and full-bridge topologies, synchronous rectifier applications, resonant mode power supplies, OR-ing and redundant power switches, DC/DC and AC/DC converters and DC/AC inverters applications. Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability High-current rating and high-current carrying capability package Product qualification according to JEDEC standard Softer body-diode compared to previous silicon generation Industry standard qualification level High performance in low frequency applications Increased power density Standard pinout allows for drop in replacement Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 195A Drain Source Voltage Vds: 40V Drain Source On State Resistance: 0.001ohm On Resistance Rds(on): 0.001ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2.2V Power Dissipation Pd: 375W Transistor Case Style: TO-220AB Power Dissipation: 375W No. of Pins: 3Pins Operating Temperature Max: 175°C