Vishay (IRFZ44RPBF) Power MOSFET, N Channel, 60 V, 50 A, 0.028 ohm

Power MOSFET, N Channel, 60 V, 50 A, 0.028 ohm, TO-220AB, Through Hole Product Overview The IRFZ44RPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. This Power device utilize advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit, combined with the ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry. Advanced process technology Ultra-low ON-resistance Dynamic dV/dt rating -55 to 175°C Operating temperature range Fully avalanche rated Applications Industrial, Power Management, Audio Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 50A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.028ohm On Resistance Rds(on): 0.028ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 150W Transistor Case Style: TO-220AB Power Dissipation: 150W No. of Pins: 3Pins Operating Temperature Max: 175°C