Onsemi (MJ802G) Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole
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  • Onsemi (MJ802G) Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole

Onsemi (MJ802G) Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole

R732.32
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Onsemi (MJ802G) Transistor, NPN, 90 V, 30 A, 200 W, TO-204, Through Hole

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Product Overview The MJ802G is a 90V Silicon NPN Bipolar High Power Transistor for use as an output device in complementary audio amplifiers to 100W music power per channel. High DC current gain Excellent safe operating area Collector-base voltage (Vcbo = 100V) Emitter-base voltage (Vcbo = 4V) Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 90V Transition Frequency ft: 2MHz Power Dissipation Pd: 200W DC Collector Current: 30A DC Current Gain hFE: 25hFE Transistor Mounting: Through Hole Transistor Case Style: TO-204 No. of Pins: 2Pins Operating Temperature Max: 200°C Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: -

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