Infineon (IPW60R041P6FKSA1) Power MOSFET, N Channel, 600 V, 77.5 A

Power MOSFET, N Channel, 600 V, 77.5 A, 0.037 ohm, TO-247, Through Hole Product Overview 600V CoolMOS™ P6 power transistor, a revolutionary technology for high voltage power MOSFETs. Designed according to the superjunction (SJ) principle and suitable for use in PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC silverbox, adapter, LCD & PDP TV, lighting, server, telecom and UPS. Increased MOSFET dv/dt ruggedness Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive Halogen free moulded compound Qualified for industrial grade applications according to JEDEC (J-STD20 and JESD22) Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 77.5A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 0.037ohm On Resistance Rds(on): 0.037ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 481W Transistor Case Style: TO-247 Power Dissipation: 481W No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: CoolMOS P6