Vishay (SIHG20N50C-E3) Power MOSFET, N Channel, 500 V, 20 A, 0.225 ohm

Power MOSFET, N Channel, 500 V, 20 A, 0.225 ohm, TO-247, Through Hole Product Overview The SIHG20N50C-E3 is a 500V N-channel Power MOSFET with high power dissipation and high peak current capability. Halogen-free according to IEC 61249-2-21 definition Low figure of merit Ron X Qg 100% Avalanche rated dV/dt Ruggedness Improved Trr/Qrr Improved gate charge Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 500V Continuous Drain Current Id: 20A Drain Source On State Resistance: 0.225ohm On Resistance Rds(on): 0.225ohm Transistor Case Style: TO-247 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 5V Power Dissipation Pd: 292W Power Dissipation: 292W No. of Pins: 3Pins Operating Temperature Max: 150°C