Stmicroelectronics (SCTW60N120G2) Silicon Carbide MOSFET, Single, 60 A

Silicon Carbide MOSFET, Single, 60 A, 1.2 kV, 0.035 ohm, HiP247 Product Information MOSFET Module Configuration: Single Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 60A Drain Source Voltage Vds: 1.2kV Drain Source On State Resistance: 0.035ohm On Resistance Rds(on): 0.035ohm Transistor Case Style: HiP247 No. of Pins: 3Pins Rds(on) Test Voltage: 18V Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 389W Power Dissipation: 389W Operating Temperature Max: 200°C