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Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm
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  • Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm

Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm

R526.20
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Infineon (SPP17N80C3XKSA1) Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm

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Power MOSFET, N Channel, 800 V, 17 A, 0.25 ohm, TO-220, Through Hole Product Overview The SPP17N80C3 is a 800V CoolMOS™ N-channel Power MOSFET features ultra-low gate current. It is designed for high DC bulk voltage and switching applications. New revolutionary high voltage technology Extreme dV/dt rated High peak current capability Qualified according to JEDEC for target applications Improved transconductance Periodic avalanche rated Low specific ON-state resistance Very low energy storage in output capacitance (Eoss)@400V Field proven CoolMOS™ quality High efficiency and power density Outstanding performance High reliability Ease of use Applications Industrial, Communications & Networking, Consumer Electronics, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 17A Drain Source Voltage Vds: 800V Drain Source On State Resistance: 0.25ohm On Resistance Rds(on): 0.25ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3V Power Dissipation Pd: 227W Transistor Case Style: TO-220 Power Dissipation: 227W No. of Pins: 3Pins Operating Temperature Max: 150°C

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