Infineon (IRFB4020PBF) Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm

Power MOSFET, N Channel, 200 V, 18 A, 0.1 ohm, TO-220AB, Through Hole Product Overview The IRFB4020PBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device. It can deliver up to 300W per channel into 8R load in half-bridge configuration amplifier. It is suitable for battery operated drive, full-bridge and push-pull application. Low RDS (ON) for improved efficiency Low Qg and Qsw for better THD and improved efficiency Low QRR for better THD and lower EMI Applications Audio, Consumer Electronics, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 18A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.1ohm On Resistance Rds(on): 0.1ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4.9V Power Dissipation Pd: 100W Transistor Case Style: TO-220AB Power Dissipation: 100W No. of Pins: 3Pins Operating Temperature Max: 175°C