Onsemi (MJD112-1G) Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A,
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  • Onsemi (MJD112-1G) Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A,

Onsemi (MJD112-1G) Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A,

R147.37
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Onsemi (MJD112-1G) Bipolar (BJT) Single Transistor, NPN, 100 V, 2 A,

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Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 100V Transition Frequency ft: 25MHz Power Dissipation Pd: 20W DC Collector Current: 2A DC Current Gain hFE: 200hFE Transistor Mounting: Through Hole Transistor Case Style: TO-251 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited

2727978
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