Infineon (IRFR5305TRPBF) Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm

Power MOSFET, P Channel, 55 V, 31 A, 0.065 ohm, TO-252AA, Surface Mount Product Overview The IRFR5305TRPBF is a -55V single P-channel HEXFET® Power MOSFET, fifth generation HEXFET utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapour phase, infrared or wave soldering techniques. Ultra low on-resistance Advanced process technology Fully avalanche rated Applications Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 31A Drain Source Voltage Vds: 55V Drain Source On State Resistance: 0.065ohm On Resistance Rds(on): 0.065ohm Rds(on) Test Voltage: 10V Transistor Mounting: Surface Mount Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 110W Transistor Case Style: TO-252AA Power Dissipation: 110W No. of Pins: 3Pins Operating Temperature Max: 175°C