Infineon (IRFP3710PBF) Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm

Power MOSFET, N Channel, 100 V, 57 A, 0.025 ohm, TO-247AC, Through Hole Product Overview The IRFP3710PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using advanced planar technology. 175°C Operating temperature Dynamic dV/dt rating Fully avalanche rated Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 57A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.025ohm On Resistance Rds(on): 0.025ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 200W Transistor Case Style: TO-247AC Power Dissipation: 200W No. of Pins: 3Pins Operating Temperature Max: 175°C