Vishay (IRF9610PBF) Power MOSFET, P Channel, 200 V, 1.75 A, 3 ohm

Power MOSFET, P Channel, 200 V, 1.75 A, 3 ohm, TO-220AB, Through Hole Product Overview The IRF9610PBF is a -200V P-channel Power MOSFET uses advanced HEXFET technology. The efficient geometry and unique processing of the HEXFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. Dynamic dV/dt rating Fast switching 150°C Operating temperature Easy to parallel Simple drive requirement Applications Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 1.75A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 3ohm On Resistance Rds(on): 3ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 20W Transistor Case Style: TO-220AB Power Dissipation: 20W No. of Pins: 3Pins Operating Temperature Max: 150°C