Infineon (IPP034N03LGXKSA1) Power MOSFET, N Channel, 30 V, 80 A, 0.0028 ohm

Power MOSFET, N Channel, 30 V, 80 A, 0.0028 ohm, TO-220, Through Hole Product Overview The IPP034N03L G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration. Increased battery lifetime Improved EMI behaviour making external snubber networks obsolete Saving space Reducing power losses Optimized technology for DC-to-DC converters Qualified according to JEDEC for target applications Logic level Excellent gate charge x RDS (ON) product (FOM) Very low ON-resistance RDS (ON) Avalanche rated Halogen-free, Green device Applications Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 80A Drain Source Voltage Vds: 30V Drain Source On State Resistance: 0.0028ohm On Resistance Rds(on): 0.0028ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 1V Power Dissipation Pd: 94W Transistor Case Style: TO-220 Power Dissipation: 94W No. of Pins: 3Pins Operating Temperature Max: 175°C