Infineon (IRFB3077PBF) Power MOSFET, N Channel, 75 V, 210 A, 0.0033 ohm

Power MOSFET, N Channel, 75 V, 210 A, 0.0033 ohm, TO-220AB, Through Hole Product Overview The IRFB3077PBF is a 75V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Improved gate, avalanche and dynamic dv/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 210A Drain Source Voltage Vds: 75V Drain Source On State Resistance: 0.0033ohm On Resistance Rds(on): 0.0033ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 370W Transistor Case Style: TO-220AB Power Dissipation: 370W No. of Pins: 3Pins Operating Temperature Max: 175°C