Onsemi (FCPF11N60) Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm

Power MOSFET, N Channel, 600 V, 11 A, 0.32 ohm, TO-220F, Through Hole Product Overview The FCPF11N60 is a 600V N-channel SuperFET® high voltage super-junction MOSFET utilizes charge balance technology for outstanding low ON-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dV/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Ultra low gate charge (Qg = 40nC) Low effective output capacitance (Coss.eff = 95pF) 100% avalanche tested Applications Industrial, Power Management, Communications & Networking, Lighting Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 11A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 0.32ohm On Resistance Rds(on): 0.32ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 5V Power Dissipation Pd: 36W Transistor Case Style: TO-220F Power Dissipation: 36W No. of Pins: 3Pins Operating Temperature Max: 150°C