Onsemi (FCP4N60) Power MOSFET, N Channel, 600 V, 3.9 A, 1 ohm

Power MOSFET, N Channel, 600 V, 3.9 A, 1 ohm, TO-220, Through Hole Product Overview The FCP4N60 is a 600V N-channel SuperFET® MOSFET, high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. This product is general usage and suitable for many different applications. Ultra low gate charge Low effective output capacitance 100% Avalanche tested Applications Power Management, Industrial, Communications & Networking, Alternative Energy, Consumer Electronics Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 3.9A Drain Source Voltage Vds: 600V Drain Source On State Resistance: 1ohm On Resistance Rds(on): 1ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 5V Power Dissipation Pd: 50W Transistor Case Style: TO-220 Power Dissipation: 50W No. of Pins: 3Pins Operating Temperature Max: 150°C