Infineon (IRFP260NPBF) Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm

Power MOSFET, N Channel, 200 V, 50 A, 0.04 ohm, TO-247AC, Through Hole Product Overview The IRFP260NPBF is 200V single N channel HEXFET power MOSFET in TO-247AC package. This MOSFET features extremely low on resistance per silicon area, dynamic dv/dt rating, ease of Paralleling, rugged, fast switching, simple drive requirements and fully avalanche rated as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications. Drain to source voltage (Vds) of 200V Gate to source voltage of ±20V On resistance Rds(on) of 40mohm at Vgs 10V Power dissipation Pd of 300W at 25°C Continuous drain current Id of 50A at Vgs 10V and 25°C Operating junction temperature range from -55°C to 175°C Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 50A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.04ohm On Resistance Rds(on): 0.04ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 300W Transistor Case Style: TO-247AC Power Dissipation: 300W No. of Pins: 3Pins Operating Temperature Max: 175°C