Infineon (IRFP3206PBF) Power MOSFET, N Channel, 60 V, 120 A, 0.0024 ohm

Power MOSFET, N Channel, 60 V, 120 A, 0.0024 ohm, TO-247AC, Through Hole Product Overview The IRFP3206PBF is a 60V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits. Improved gate, avalanche and dynamic dv/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 120A Drain Source Voltage Vds: 60V Drain Source On State Resistance: 0.0024ohm On Resistance Rds(on): 0.0024ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 280W Transistor Case Style: TO-247AC Power Dissipation: 280W No. of Pins: 3Pins Operating Temperature Max: 175°C