Vishay (IRF9Z30PBF) Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.093 ohm

Power MOSFET, HEXFET, P Channel, 50 V, 18 A, 0.093 ohm, TO-220AB, Through Hole Product Overview The IRF9Z30PBF is a P-channel enhancement-mode Power MOSFET designed for application which require the convenience of reverse polarity operation. This device design achieve very low ON-state resistance combined with high trans-conductance and extreme device ruggedness. It is intended for use in power stages where complementary symmetry with n-channel devices offer circuit simplification. It is also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Fast switching Compact plastic package Low drive current Ease of paralleling Excellent temperature stability Applications Industrial, Power Management Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 18A Drain Source Voltage Vds: 50V Drain Source On State Resistance: 0.093ohm On Resistance Rds(on): 0.093ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 74W Transistor Case Style: TO-220AB Power Dissipation: 74W No. of Pins: 3Pins Operating Temperature Max: 150°C