Diodes Inc. (FZT857) Bipolar (BJT) Single Transistor, NPN, 300 V
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  • Diodes Inc. (FZT857) Bipolar (BJT) Single Transistor, NPN, 300 V

Diodes Inc. (FZT857) Bipolar (BJT) Single Transistor, NPN, 300 V

R149.19
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Diodes Inc. (FZT857) Bipolar (BJT) Single Transistor, NPN, 300 V

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Product Overview The FZT857 is a 300V NPN Complementary Medium Power High Current Transistor with matte tin plated leads solderable as per MIL-STD-202 standard, method 208. High continuous collector current Very low saturation voltage Complementary PNP type FZT957 hFE specified up to 3A for a high gain hold-up AEC-Q101 qualified UL94V-0 Flammability rating Applications Automotive, Aerospace, Defence, Military Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 300V DC Collector Current: 3.5A Power Dissipation Pd: 3W Transistor Case Style: SOT-223 Transistor Mounting: Surface Mount No. of Pins: 3Pins Transition Frequency ft: 80MHz DC Current Gain hFE: 200hFE Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: MSL 1 - Unlimited

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