Onsemi (MJD127G) Bipolar (BJT) Single Transistor, PNP, 100 V, 8 A

Product Overview The MJD127G is a 8A PNP bipolar power Darlington Transistor designed for general purpose amplifier and low speed switching applications. It is the surface-mount replacement for 2N6040 to 2N6045 series, TIP120 to TIP122 series and TIP125 to TIP127 series. Lead formed for surface-mount applications in plastic sleeves Monolithic construction with built-in base-emitter shunt resistors Complementary pairs simplifies designs AEC-Q101 qualified and PPAP capable Product Information Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 100V DC Collector Current: 8A Transition Frequency ft: - Power Dissipation Pd: 1.75W DC Current Gain hFE: 12hFE Transistor Mounting: Surface Mount Transistor Case Style: TO-252 (DPAK) No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited