Wolfspeed (C2M0160120D) Silicon Carbide MOSFET, Single, N Channel, 19 A

Silicon Carbide MOSFET, Single, N Channel, 19 A, 1.2 kV, 0.16 ohm, TO-247 Product Overview The C2M0160120D is a 1.2kV N-channel enhancement mode silicon carbide Power MOSFET of high speed switching with low capacitances. The Z-FET™ MOSFET is ideal for high-frequency applications. The silicon carbide power MOSFET features higher system efficiency, reduced cooling requirements and increased system switching frequency. High blocking voltage with low RDS (on) Easy to parallel and simple to drive Resistant to latch-up Halogen-free Applications Power Management, Alternative Energy Product Information MOSFET Module Configuration: Single Channel Type: N Channel Continuous Drain Current Id: 19A Transistor Polarity: N Channel Drain Source Voltage Vds: 1.2kV On Resistance Rds(on): 0.16ohm Drain Source On State Resistance: 0.16ohm Rds(on) Test Voltage: 20V Transistor Case Style: TO-247 Gate Source Threshold Voltage Max: 2.6V Power Dissipation Pd: 125W No. of Pins: 3Pins Operating Temperature Max: 150°C Power Dissipation: 125W Product Range: C2M