Infineon (BCR135E6327HTSA1) Bipolar Digital Transistor, NPN, 50V, 100mA

Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100mA, 10 kohm, 47 kohm, 0.21 (Ratio) Product Overview The BCR 135 E6327 is a NPN silicon digital Bipolar Transistor suitable for switching circuit, inverter and interface circuit driver circuit applications. Built-in bias resistor (R1 = 10kR, R2 = 47kR) Product Information Digital Transistor Polarity: Single NPN Collector Emitter Voltage V(br)ceo: 50V Continuous Collector Current Ic: 100mA Base Input Resistor R1: 10kohm Base-Emitter Resistor R2: 47kohm Resistor Ratio, R1 / R2: 0.21(Ratio) RF Transistor Case: SOT-23 Transistor Mounting: Surface Mount No. of Pins: 3 Pin Product Range: - Automotive Qualification Standard: AEC-Q101 MSL: MSL 1 - Unlimited