Onsemi (MJE3055TG) Bipolar (BJT) Single Transistor, NPN, 60 V, 10 A

Product Overview The MJE3055TG is a 60V NPN complementary plastic silicon Bipolar Transistor designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices. DC current gain specified to 10A High current gain - bandwidth 70VDC Collector to base voltage (VCBO) 5V Emitter to base voltage (VEBO) 6ADC Base current (IB) 1.67°C/W Thermal resistance, junction to case Applications Industrial Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 60V Transition Frequency ft: 2MHz Power Dissipation Pd: 75W DC Collector Current: 10A DC Current Gain hFE: 5hFE Transistor Mounting: Through Hole Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -