Vishay (IRF740LCPBF) Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm

Power MOSFET, N Channel, 400 V, 10 A, 0.55 ohm, TO-220AB, Through Hole Product Overview The IRF740LCPBF is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge Power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge MOSFETs. This device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFET offers the designer a new standard in power transistors for switching applications. Repetitive avalanche rated Reduced gate drive requirement 30V Enhanced VGS Rating Reduced CISS, COSS, CRSS Extremely high frequency operation Applications Industrial, Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 10A Drain Source Voltage Vds: 400V Drain Source On State Resistance: 0.55ohm On Resistance Rds(on): 0.55ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 125W Transistor Case Style: TO-220AB Power Dissipation: 125W No. of Pins: 3Pins Operating Temperature Max: 150°C