Microchip (LP0701N3-G) Power MOSFET, P Channel, 16.5 V, 500 mA, 1.3 ohm

Power MOSFET, P Channel, 16.5 V, 500 mA, 1.3 ohm, TO-92, Through Hole Product Overview This enhancement-mode (normally-off) transistor utilises a lateral MOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistor and with the high input impedance and negative temperature coefficient inherent in MOS devices. Suitable for logic level interfaces, solid state relays, battery operated systems, photo voltaic drives, analogue switches etc. Ultra-low threshold High input impedance Low input capacitance Fast switching speeds Low on-resistance Freedom from secondary breakdown Low input and output leakage Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 500mA Drain Source Voltage Vds: 16.5V Drain Source On State Resistance: 1.3ohm On Resistance Rds(on): 1.3ohm Rds(on) Test Voltage: 5V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 700mV Power Dissipation Pd: 1W Transistor Case Style: TO-92 Power Dissipation: 1W No. of Pins: 3Pins Operating Temperature Max: 150°C