Infineon (IRFP250MPBF) Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm

Power MOSFET, N Channel, 200 V, 30 A, 0.075 ohm, TO-247AC, Through Hole Product Overview Single N-channel HEXFET® power MOSFET Advanced process technology Fast switching Fully avalanche rated Dynamic dv/dt rating Ease of paralleling Simple drive requirements Planar cell structure for wide SOA Product qualification according to JEDEC standard Targeted for high power density Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 30A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.075ohm On Resistance Rds(on): 0.075ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 214W Transistor Case Style: TO-247AC Power Dissipation: 214W No. of Pins: 3Pins Operating Temperature Max: 175°C Product Range: HEXFET