Infineon (IRLB3034PBF) Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.0014 ohm, TO-220AB, Through Hole Product Overview The IRLB3034PBF is 40V single N channel HEXFET power MOSFET in TO-220AB package. This MOSFET features improved gate, avalanche and dynamic dV/dt ruggedness, fast switching. Applicable at high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, DC motor drive, hard switched and high frequency circuits. Enhanced body diode dV/dt and dI/dt capability Fully characterized capacitance and avalanche SOA Very low Rds(on) at 4.5V Vgs Superior RxQ at 4.5V VGS Optimized for logic level drive Drain to source voltage (Vds) of 40V Gate to source voltage of ±20V On resistance Rds(on) of 1.4mohm at Vgs 10V Power dissipation Pd of 375W at 25°C Operating junction temperature range from -55°C to 175°C Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 195A Drain Source Voltage Vds: 40V Drain Source On State Resistance: 0.0014ohm On Resistance Rds(on): 0.0014ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 2.5V Power Dissipation Pd: 375W Transistor Case Style: TO-220AB Power Dissipation: 375W No. of Pins: 3Pins Operating Temperature Max: 175°C