Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A
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  • Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A

Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A

R228.22
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Onsemi (FJP13009H2TU) Bipolar (BJT) Single Transistor, NPN, 400 V, 12 A

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Product Overview The FJP13009H2TU is a high voltage fast-switching NPN epitaxial planar Power Transistor. The FJP13009H2TU is available with multiple hFE bin classes for ease of design use. Designed for high speed switching applications and offers excellent power dissipation. High voltage capability High switching speed 700V Collector-base voltage 9V Emitter-base voltage 6A Base current Product Information Transistor Polarity: NPN Collector Emitter Voltage V(br)ceo: 400V Transition Frequency ft: 4MHz Power Dissipation Pd: 100W DC Collector Current: 12A DC Current Gain hFE: 8hFE Transistor Mounting: Through Hole Transistor Case Style: TO-220 No. of Pins: 3Pins Operating Temperature Max: 150°C Product Range: - Automotive Qualification Standard: - MSL: -

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