Onsemi (FQP12P20) Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm

Power MOSFET, P Channel, 200 V, 11.5 A, 0.36 ohm, TO-220, Through Hole Product Overview The FQP12P20 is a QFET® P-channel enhancement-mode Power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications. 100% avalanche tested 31nC typical gate charge 30pF typical low Crss Product Information Channel Type: P Channel Transistor Polarity: P Channel Continuous Drain Current Id: 11.5A Drain Source Voltage Vds: 200V Drain Source On State Resistance: 0.36ohm On Resistance Rds(on): 0.36ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 5V Power Dissipation Pd: 120W Transistor Case Style: TO-220 Power Dissipation: 120W No. of Pins: 3Pins Operating Temperature Max: 150°C