Vishay (IRF840PBF) Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm

Power MOSFET, N Channel, 500 V, 8 A, 0.85 ohm, TO-220AB, Through Hole Product Overview The IRF840PBF is a 500V N-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W. Dynamic dV/dt rating Repetitive avalanche rated 175°C Operating temperature Easy to parallel Simple drive requirement Applications Power Management Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 500V Continuous Drain Current Id: 8A Drain Source On State Resistance: 0.85ohm On Resistance Rds(on): 0.85ohm Transistor Case Style: TO-220AB Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 125W Power Dissipation: 125W No. of Pins: 3Pins Operating Temperature Max: 150°C