Infineon (AUIRFB8409) Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm

Power MOSFET, N Channel, 40 V, 195 A, 0.001 ohm, TO-220AB, Through Hole Product Overview The AUIRFB8409 is a 40V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications. Advanced process technology New ultra low on-resistance Repetitive avalanche allowed up to Tjmax Automotive qualified 175°C Operating temperature Applications Automotive Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 195A Drain Source Voltage Vds: 40V Drain Source On State Resistance: 0.001ohm On Resistance Rds(on): 0.001ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 3.9V Power Dissipation Pd: 375W Transistor Case Style: TO-220AB Power Dissipation: 375W No. of Pins: 3Pins Operating Temperature Max: 175°C Qualification: AEC-Q101 Automotive Qualification Standard: AEC-Q101