Onsemi (MJ11015G) Bipolar (BJT) Single Transistor, PNP, 120 V, 30 A

Product Overview The MJ11015G from On Semiconductor is a through hole, 30A, 120V PNP darlington bipolar power transistor in TO-204AA(TO-3) package. Features high DC current gain and monolithic construction with built-in base emitter shunt resistor. It functions as an output device in complementary general purpose amplifier applications. Collector to emitter voltage (Vce) of -120V Collector current (Ic) of -30A Power dissipation of 200W Operating junction temperature range from -55°C to 200°C Collector emitter breakdown Voltage of -120V Collector emitter saturation voltage of -3V at 20A collector current Applications Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial Product Information Transistor Polarity: PNP Collector Emitter Voltage V(br)ceo: 120V DC Collector Current: 30A Power Dissipation Pd: 200W Transistor Case Style: TO-3 Transistor Mounting: Through Hole No. of Pins: 2Pins Transition Frequency ft: - DC Current Gain hFE: 1000hFE Operating Temperature Max: 200°C Product Range: - Automotive Qualification Standard: - MSL: -