Stmicroelectronics (SCT30N120) Silicon Carbide MOSFET, Single, 40 A

Silicon Carbide MOSFET, Single, 40 A, 1.2 kV, 0.08 ohm, HiP247 Product Overview The SCT30N120 is a N-channel silicon carbide Power MOSFET, unsurpassed on-resistance per unit area and very good switching performance independent of temperature. Suitable for high efficiency and high power density applications. Very tight variation of on-resistance vs. temperature Slight variation of switching losses vs. temperature Very high operating temperature capability (200°C) Very fast and robust intrinsic body diode Low capacitance Applications Industrial, Power Management Product Information MOSFET Module Configuration: Single Channel Type: N Channel Continuous Drain Current Id: 40A Transistor Polarity: N Channel Drain Source Voltage Vds: 1.2kV On Resistance Rds(on): 0.08ohm Drain Source On State Resistance: 0.08ohm Rds(on) Test Voltage: 20V Transistor Case Style: HiP247 Gate Source Threshold Voltage Max: 2.6V Power Dissipation Pd: 270W No. of Pins: 3Pins Operating Temperature Max: 200°C Power Dissipation: 270W MSL: MSL 1 - Unlimited