Infineon (IRF8010PBF) Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm

Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole Product Overview The IRF8010PBF is a HEXFET® single N-channel Power MOSFET offers low gate-to-drain charge to reduce switching losses. It is suitable for high frequency DC-to-DC converters. Fully characterized capacitance including effective COSS to simplify design Fully characterized avalanche voltage and current Dynamic dV/dt rating Fast switching Fully avalanche rating Applications Power Management, Motor Drive & Control Product Information Channel Type: N Channel Transistor Polarity: N Channel Continuous Drain Current Id: 80A Drain Source Voltage Vds: 100V Drain Source On State Resistance: 0.015ohm On Resistance Rds(on): 0.015ohm Rds(on) Test Voltage: 10V Transistor Mounting: Through Hole Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 260W Transistor Case Style: TO-220AB Power Dissipation: 260W No. of Pins: 3Pins Operating Temperature Max: 175°C