Stmicroelectronics (STW4N150) Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm

Power MOSFET, N Channel, 1.5 kV, 4 A, 7 ohm, TO-247, Through Hole\ Product Overview The STW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements. 100% Avalanche tested Intrinsic capacitances and Qg minimized High speed switching Applications Industrial Product Information Channel Type: N Channel Transistor Polarity: N Channel Drain Source Voltage Vds: 1.5kV Continuous Drain Current Id: 4A Drain Source On State Resistance: 7ohm On Resistance Rds(on): 7ohm Transistor Case Style: TO-247 Transistor Mounting: Through Hole Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 4V Power Dissipation Pd: 160W Power Dissipation: 160W No. of Pins: 3Pins Operating Temperature Max: 150°C